In2se3 photodetector

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August undefined, 2024

WitrynaThe α-In. 2. Se. 3. THz Photodetector. Abstract: Terahertz (THz) photodetectors are widely used for applications related to security measurements and medicine due to … Witryna21 kwi 2015 · Furthermore, our patterned two-dimensional In2Se3 crystal arrays have been integrated and packaged to flexible photodetectors, yielding an ultrahigh external photoresponsivity of ∼1,650 A W (-1) at 633 nm.

Defect-induced broadband photodetection of layered γ-In2Se3 …

The photodetector using the In 2 Se 3 nanobelts exhibits high photoresponsivity of 66.6 A·W −1 at 442 nm and high stability under an atmospheric environment. This work provides a new route for the development of α -In 2 Se 3 nanobelts as promising candidates for low-cost, nanoscale actuators, sensors, and detectors. Introduction Witryna6 gru 2024 · Progress and challenges on the applications of In 2 Se 3 nanostructures in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics are discussed in detail. In the last part of this review, perspectives on the challenges and opportunities in the preparation and applications of In 2 Se 3 materials are presented. … phil wittmer

Ferroelectric-Tunable Photoresponse in α- In 2 Se 3 Photovoltaic ...

WitrynaHere, we proposed a feasible strategy that can simultaneously improve the responsivity and response speed of In 2 Se 3 -based photodetectors by applying the mechanical … Witryna21 sie 2024 · The γ-In 2 Se 3 /p-Si heterojunction photodetector has high responsivity under UV to visible light illumination. The heterojunction exhibits highly stable photodetection characteristics with an ultrafast response/recovery time of 15/366 μs. ... High-quality γ-In2Se3 thin films and a γ-In2Se3/p-Si heterojunction were prepared … Witryna1 mar 2024 · Other than previous α-In 2 Se 3-based devices, our photodetector extends the working wavelength from 1000 nm to 1550 nm (see Table 1), showing the infra … tsinghua science and technology latex

Mixed-dimensional WS2/WSe2/Si unipolar barrier ... - Springer

Self-Assembly High-Performance UV-vis-NIR Broadband β-In

Witryna11 kwi 2024 · The vdWs stacked photodetector with an improved type-II band alignment not only realizes a broadband spectral response from visible to near infrared (405–905 nm), but also operates well with a diode-like behavior. This behavior is further confirmed by the high-resolution scanning photocurrent mapping. WitrynaThe α-In2Se3 THz Photodetector Abstract: Terahertz (THz) photodetectors are widely used for applications related to security measurements and medicine due to their … tsinghua school of environmentWitryna5 sty 2024 · In 2 Se 3 has drawn special attention owing to the existence of intercoupled in-plane (IP) and out-of-plane (OOP) ferroelectricity in monolayer form, which makes … phil wittmer virginia

"WitrynaHere, we proposed a feasible strategy that can simultaneously improve the responsivity and response speed of In 2 Se 3 -based photodetectors by applying the mechanical strain and producing the piezoresistive effect, which can synergistically modulate the band structure and boost the overall photodetecting performances. " - In2se3 photodetector

In2se3 photodetector

Witryna16 lip 2024 · With applying the tensile strain of 0.433%, the photocurrent of the photodetector can be enhanced by about 18 times. Furthermore, the photodetectors … Witryna28 mar 2024 · Here, a facile approach for depositing amorphous-In2Se3 (a-In2Se3) on Si substrate by physical vapor deposition (PVD) process is proposed to fabricate high-performance a-In2Se3/Si heterojunction photodetectors. The as-produced devices are sensitive to a broad-spectrum (255-1300 nm), exhibiting superior overall performance …

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Witryna23 mar 2024 · On the basis of the in-plane switchable diode effect and the narrow band gap (∼1.3 eV) of ferroelec. In2Se3, a prototypical nonvolatile memory device, which … Witryna28 mar 2024 · Here, a facile approach for depositing amorphous-In2Se3 (a-In2Se3) on Si substrate by physical vapor deposition (PVD) process is proposed to fabricate high …

Witryna20 gru 2024 · Self-Assembly High-Performance UV-vis-NIR Broadband β-In 2 Se 3 /Si Photodetector Array for Weak Signal Detection ACS Appl Mater Interfaces. 2024 … Witryna16 lip 2024 · With applying the tensile strain of 0.433%, the photocurrent of the photodetector can be enhanced by about 18 times. Furthermore, the photodetectors present remarkable photoresponsivity and detectivity that can reach up to 4.61 × 10 5 A W −1 and 4.34 × 10 14 Jones, respectively. These results indicate that the piezo …

WitrynaThe InSe devices fabricated on rigid SiO 2 /Si substrates possess a response time of ∼50 ms and exhibit long-term stability in photoswitching. These InSe devices can also operate on a flexible substrate with or without bending and reveal comparable performance to those devices on SiO 2 /Si. Witryna12 gru 2011 · The single In 2 Se 3 nanowire photodetectors show high and stable photoresponse in wide light wavelength (254-800 nm) and temperature range (7-300 …

Witryna23 kwi 2024 · In2Se3 Visible/Near-IR Photodetector With Observation of Band-Edge in Spectral Response Abstract: We report on the demonstration of visible/near-IR high …

Witryna8 lut 2024 · Two-dimensional α-In2Se3 has drawn broad attention due to its high photoresponse and unique room-temperature interlocked in-plane and out-of-plane ferroelectricity with an ultralow switching... phil withingtonWitrynaIn this work, we present the assembly of a γ-In2Se3/GaAs heterostructure-based photodetector linear array composed of 1 × 10 device units. The layered γ-In2Se3 films with a well-defined pattern are deposited directly onto a planar GaAs substrate via radio-frequency (RF) magnetron sputtering deposition assist phil wittmann attorney new orleansWitrynaThe synthesis of high-quality In2Se3 nanowire arrays via thermal evaporation method and the photoconductive characteristics of In2Se3 individual nanowires are first … tsinghua research instituteWitryna24 cze 2024 · Here, a planar photodetector array with an out-of-plane vertical In 2 Se 3 /SnSe 2 heterostructure as the photosensitive channel was self-assembled through a … phil wittmer kansas phil witte vetWitryna12 lis 2024 · Upon laser illumination with a wavelength of 650 nm, the typical heterojunction device exhibits a photocurrent on/off ratio exceeding 1.24 × 10 5, a maximum photo responsivity of 26 mA W −1 and a short photoresponse time of 2.22 ms. Moreover, the heterojunction photodetectors show obvious light response in the … tsinghua science and technology ccfWitryna23 kwi 2024 · In2Se3 Visible/Near-IR Photodetector With Observation of Band-Edge in Spectral Response Abstract: We report on the demonstration of visible/near-IR high-performance photodetector based on exfoliated β-Indium selenide (In 2 Se 3 ) on sapphire with a clear signature of band edge in spectral responsivity at a wavelength … phil witt obituary